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Parameter variations introduced by manufacturing imprecision are becoming more influential on circuit performance. This is especially the case in emerging nanoscale fabrics due to unconventional manuf...
In this paper a systematic modeling and control approach for flow problems is considered. A nonlinear Galerkin model is obtained from the partial differential equations (PDEs) describing the flow; and...
In this paper a novel method is proposed for constructing linear parameter varying (LPV) system models through adaptation. For a class of nonlinear systems, an LPV model is built using its linear part...
In this paper, a distributed-parameter state variable approach is used to calculate transients on transmission lines based on the concept of travelling waves. The method of characteristics for lossles...
Transducers are essential system components used in the process control industry and also in many engineering areas. In this study, a method is proposed to determine the optimum parameter tolerances b...
In this paper, linear field problems with a varying physical parameter are solved with the conjugate-gradient FFT method and a dedicated extrapolation procedure for generating the initial estimate. Th...
The main steps for characterization and measurement of microwave absorbent materials in the 1–10 GHz range are introduced. The coaxial reflection-transmission type of material parameter measurem...
A new and simple parameter-extraction method for the equivalent circuit of defected ground structure (DGS) is presented. Using this method, circuit simulation, based on the DGS equivalent-circuit mode...
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determin...
Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and...
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...

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