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Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing
rapid thermal annealing (RTA) Si+ implantation photoluminescence SiO2 films
2010/10/12
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen
flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions.
Room-temperature PL f...
专著信息
书名
Low dielectric constant nanoporous SiO2 films formed by twice modification processing
语种
英文
撰写或编译
作者
C.M.Zhen,Z.Q.Zhao,Z.W.He X.F.Nie,Y.Y Wang
第一作者单位
出版社
Materials Letters 59 1470-1473 (2005)
...