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搜索结果: 1-15 共查到Photodetector相关记录20条 . 查询时间(0.064 秒)
In today’s increasingly powerful electronics, tiny materials are a must as manufacturers seek to increase performance without adding bulk.Smaller also is better for optoelectronic devices — like camer...
Tiny “black holes” on a silicon wafer make for a new type of photodetector that could move more data at lower cost around the world or across a data center. The technology, developed by electrical eng...
Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a portable and noninvasive tool for monitoring of blood oxygenation. In this paper we have introduced a new miniaturiz...
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm 2 OCIS codes: (230.0230) Optical devices; (230.4110) Modulators giving an extinction ratio...
We experimentally demonstrate the first complimentary device to photodetector–output current decreases upon shining light. The device enables receiver-less optical interconnect scheme in conjunction w...
We design, fabricate and demonstrate 850 nm VCSEL and PD arrays which operate at 25 Gb/s per channel, up to 600 Gb/s with 24 channels, for low-power parallel optical module applications. We also repor...
We report the first demonstration of a waveguide-integrated avalanche photodetector using Group-IV heterostructure materials. Such device achieved a responsivity of ~0.8A/W at unity gain and an impres...
Researchers at IBM have made the first photodetector from graphene – a sheet of carbon just one atom thick. The device, which can accurately detect optical data streams at speeds of 10 Gbit/s, could b...
Scientists at IBM have used nano-engineering techniques to make the world's fastest "avalanche photodetector". Such devices are used in telecommunications networks and the work is an important advance...
Green silicon photodetector is successfully developed on the substrate of n-type single- -crystal (100) silicon. To improve its performance, the detector is optimized by optimizing the p-n junction ...
A novel bias-feeding photodetector is presented, suitable for dc-coupling with post-amplifiers or DEMUX-ICs, thus greatly reducing the RF coupling losses into subsequent electronics. The receiver modu...
In this paper, we demonstrate our electro-optic sampling system constructed for characterization of high-speed photodetectors based on low-temperature-grown GaAs (LT-GaAs). Changes in the shape of ele...
A DPSK receiver concept using flipchip hybrid integration of InP photodetectors on SOI boards with optical decoder is presented. Horizontal waveguiding enables low-cost production for high data rates.
期刊信息 篇名 The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition 语种 日文 撰写或编译 撰写 作者 Xiying Ma,Baohe Yuan,Zhijun Yan 第一作者单位 绍兴文理学院 刊物名称 Optics Communications 页面...
We present a simulation based investigation of the dependence of the device characteristics on the quantum well width in AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) through the ensemble M...

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