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Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
AlGaInP/GaInP Laser Molecular Beam Epitaxy
2010/12/10
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two ki...