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Hole Mobility in Strained Ge and III-V P-channel Inversion Layers with Self-consistent Valence Subband Structure and High-k Insulators
Ge and III-V high-k hole mobility k.p strained p-channel valence subband structure
2014/11/7
We present a comprehensive investigation of the low-ˉeld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. ...